PEMB2,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

SOT-563, SOT-666

Width :

6.35mm

Terminal Form :

Flat

Transistor Application :

SWITCHING

Max Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

1μA

hFE Min :

80

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Transistor Type :

2 PNP - Pre-Biased (Dual)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Termination :

SMD/SMT

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Transition Frequency :

180MHz

Resistor - Base (R1) :

47k Ω

Radiation Hardening :

No

Pin Count :

6

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Height :

6.35mm

Number of Pins :

6

Published :

2011

Min Operating Temperature :

-65°C

Collector Emitter Voltage (VCEO) :

50V

REACH SVHC :

No SVHC

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Length :

6.35mm

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Polarity :

PNP

Lead Free :

Lead Free

Resistor - Emitter Base (R2) :

47k Ω

Number of Terminations :

6

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Weight :

4.535924g

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Base Part Number :

MB2

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1