PEMB18,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

300mW

ECCN Code :

EAR99

Number of Terminations :

6

Max Collector Current :

100mA

Resistor - Base (R1) :

4.7k Ω

Polarity :

PNP

Resistor - Emitter Base (R2) :

10k Ω

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

JESD-609 Code :

e3

Base Part Number :

MB18

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 2.1

Lead Free :

Lead Free

Min Operating Temperature :

-65°C

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1μA

Factory Lead Time :

4 Weeks

Published :

2011

Transistor Application :

SWITCHING

Transistor Type :

2 PNP - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Pin Count :

6

Number of Pins :

6

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount