PDTD143ETR

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

100mV

Resistor - Emitter Base (R2) :

4.7 k Ω

Max Collector Current :

500mA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Published :

2014

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Number of Elements :

1

Number of Terminations :

3

Number of Pins :

3

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

320mW

Mount :

Surface Mount

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

Frequency - Transition :

225MHz

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN - Pre-Biased

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 50mA 5V

Mounting Type :

Surface Mount

Power - Max :

320mW

Transition Frequency :

225MHz

Resistor - Base (R1) :

4.7 k Ω