PDTD113EQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

325mW

Resistor - Base (R1) :

1 k Ω

Frequency - Transition :

210MHz

Series :

Automotive, AEC-Q101

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Max Power Dissipation :

325mW

Terminal Form :

NO LEAD

Package / Case :

3-XDFN Exposed Pad

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN RESISTOR

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Transition Frequency :

210MHz

Collector Emitter Voltage (VCEO) :

100mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-N3

Number of Elements :

1

Max Collector Current :

500mA

Reference Standard :

AEC-Q101; IEC-60134

Transistor Type :

NPN - Pre-Biased

Published :

2014

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Case Connection :

COLLECTOR

Pin Count :

3

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

3

Polarity/Channel Type :

NPN

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

1 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V