PDTD113ZQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mount :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 10

Transistor Type :

NPN - Pre-Biased

Series :

Automotive, AEC-Q101

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Max Collector Current :

500mA

Pin Count :

3

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

100mV

Reference Standard :

AEC-Q101; IEC-60134

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

500nA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Package / Case :

3-XDFN Exposed Pad

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Published :

2014

JESD-30 Code :

R-PDSO-N3

Polarity/Channel Type :

NPN

Power - Max :

325mW

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

325mW

Transition Frequency :

210MHz

Frequency - Transition :

210MHz

Transistor Element Material :

SILICON

Resistor - Base (R1) :

1 k Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistor - Emitter Base (R2) :

10 k Ω

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount