PDTD113ZQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Package / Case :

3-XDFN Exposed Pad

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Max Collector Current :

500mA

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 10

Polarity/Channel Type :

NPN

Reference Standard :

AEC-Q101; IEC-60134

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Power - Max :

325mW

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

325mW

Series :

Automotive, AEC-Q101

Resistor - Base (R1) :

1 k Ω

Current - Collector Cutoff (Max) :

500nA

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

100mV

Number of Elements :

1

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Resistor - Emitter Base (R2) :

10 k Ω

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Published :

2014

Transistor Type :

NPN - Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Frequency - Transition :

210MHz

Case Connection :

COLLECTOR

JESD-30 Code :

R-PDSO-N3

Terminal Position :

Dual

Mount :

Surface Mount

Transition Frequency :

210MHz