PDTD123EQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

NO LEAD

JESD-30 Code :

R-PDSO-N3

Package / Case :

3-XDFN Exposed Pad

Packaging :

Tape and Reel (TR)

Pin Count :

3

Terminal Position :

Dual

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

NPN - Pre-Biased

Published :

2014

Factory Lead Time :

4 Weeks

Transition Frequency :

210MHz

Reference Standard :

AEC-Q101; IEC-60134

Power - Max :

325mW

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101

Mounting Type :

Surface Mount

Max Power Dissipation :

325mW

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

2.2 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

100mV

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Mount :

Surface Mount

Max Collector Current :

500mA

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

2.2 k Ω

Frequency - Transition :

210MHz

Polarity/Channel Type :

NPN