PDTD114ETR

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

RoHS Status :

ROHS3 Compliant

Transition Frequency :

225MHz

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Resistor - Base (R1) :

10 k Ω

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Polarity/Channel Type :

NPN

Resistor - Emitter Base (R2) :

10 k Ω

Factory Lead Time :

4 Weeks

Transistor Type :

NPN - Pre-Biased

Transistor Application :

SWITCHING

Number of Pins :

3

Frequency - Transition :

225MHz

Pin Count :

3

Max Collector Current :

500mA

Power - Max :

320mW

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Max Power Dissipation :

320mW

Mounting Type :

Surface Mount

Published :

2014

Number of Elements :

1

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA

Mount :

Surface Mount

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

100mV