PBLS6023D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A

Transition Frequency :

150MHz

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Current - Collector Cutoff (Max) :

1μA 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 140 @ 1A 2V

Resistor - Base (R1) :

10k Ω

Voltage - Collector Emitter Breakdown (Max) :

50V 60V

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

10k Ω

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

-5V

Lead Free :

Lead Free

Frequency - Transition :

150MHz

Polarity :

NPN, PNP

Continuous Collector Current :

-1.5A

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Transistor Application :

SWITCHING

hFE Min :

285

Collector Emitter Breakdown Voltage :

60V

Number of Elements :

2

Radiation Hardening :

No

Max Collector Current :

1.5A

Power Dissipation :

371mW

Terminal Form :

Gull wing

Max Power Dissipation :

760mW

Package / Case :

SC-74, SOT-457

Max Breakdown Voltage :

60V

Published :

2009

Collector Emitter Voltage (VCEO) :

150mV

Current - Collector (Ic) (Max) :

100mA 1.5A

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Number of Pins :

6

Mounting Type :

Surface Mount