PBLS6023D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Emitter Base (R2) :

10k Ω

Voltage - Collector Emitter Breakdown (Max) :

50V 60V

Package / Case :

SC-74, SOT-457

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Published :

2009

Resistor - Base (R1) :

10k Ω

Number of Pins :

6

Min Operating Temperature :

-55°C

Polarity :

NPN, PNP

Mount :

Surface Mount

Power Dissipation :

371mW

Terminal Form :

Gull wing

Transition Frequency :

150MHz

Max Collector Current :

1.5A

hFE Min :

285

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

60V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Number of Terminations :

6

Frequency - Transition :

150MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 140 @ 1A 2V

Packaging :

Tape and Reel (TR)

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Element Configuration :

Dual

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

-1.5A

Max Operating Temperature :

150°C

Emitter Base Voltage (VEBO) :

-5V

JESD-609 Code :

e3

Max Breakdown Voltage :

60V

Factory Lead Time :

4 Weeks

Max Power Dissipation :

760mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

150mV

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

1μA 100nA

Radiation Hardening :

No

Current - Collector (Ic) (Max) :

100mA 1.5A

Pin Count :

6