PBLS1503Y,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

1.1V

ECCN Code :

EAR99

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Published :

2004

Max Power Dissipation :

300mW

Length :

2.2mm

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 250mV @ 50mA, 500mA

Min Operating Temperature :

-65°C

Radiation Hardening :

No

Voltage - Collector Emitter Breakdown (Max) :

50V 15V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 150 @ 100mA. 2V

Number of Pins :

6

Transistor Application :

SWITCHING

Polarity :

NPN, PNP

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Dual

Current - Collector (Ic) (Max) :

100mA 500mA

Resistor - Emitter Base (R2) :

10k Ω

Frequency - Transition :

280MHz

Base Part Number :

PBLS1503

Max Breakdown Voltage :

15V

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10k Ω

Mount :

Surface Mount

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Number of Elements :

2

Max Collector Current :

500mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Breakdown Voltage :

15V

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

280MHz

Max Operating Temperature :

150°C

Current - Collector Cutoff (Max) :

1μA 100nA

Collector Emitter Voltage (VCEO) :

150mV

Width :

1.35mm

Collector Emitter Saturation Voltage :

150mV