PBLS1503Y,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Resistor - Base (R1) :

10k Ω

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

10k Ω

Terminal Form :

Gull wing

Number of Elements :

2

Factory Lead Time :

4 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 150 @ 100mA. 2V

Terminal Finish :

Tin (Sn)

Collector Emitter Breakdown Voltage :

15V

Width :

1.35mm

Transition Frequency :

280MHz

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 250mV @ 50mA, 500mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Emitter Base Voltage (VEBO) :

1.1V

HTS Code :

8541.21.00.75

Base Part Number :

PBLS1503

Height :

1mm

Min Operating Temperature :

-65°C

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN, PNP

Length :

2.2mm

ECCN Code :

EAR99

JESD-609 Code :

e3

Max Power Dissipation :

300mW

Voltage - Collector Emitter Breakdown (Max) :

50V 15V

Current - Collector Cutoff (Max) :

1μA 100nA

Packaging :

Tape and Reel (TR)

Pin Count :

6

Current - Collector (Ic) (Max) :

100mA 500mA

Frequency - Transition :

280MHz

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Max Breakdown Voltage :

15V

Collector Emitter Saturation Voltage :

150mV

Element Configuration :

Dual

Published :

2004

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Max Collector Current :

500mA

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

150mV

Max Operating Temperature :

150°C

Mount :

Surface Mount