PBLS1501Y,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Max Power Dissipation :

300mW

Published :

2009

Resistor - Emitter Base (R2) :

2.2k Ω

Number of Terminations :

6

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Element Configuration :

Dual

Max Collector Current :

500mA

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

1μA 100nA

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Number of Pins :

6

Resistor - Base (R1) :

2.2k Ω

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Min Operating Temperature :

-65°C

Operating Supply Voltage :

50V

Frequency - Transition :

280MHz

Polarity :

NPN, PNP

Number of Elements :

2

Lead Free :

Lead Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Factory Lead Time :

4 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V / 150 @ 100mA 2V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Base Part Number :

PBLS1501

Voltage - Collector Emitter Breakdown (Max) :

50V 15V

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 250mV @ 50mA, 500mA

Transition Frequency :

280MHz

Collector Emitter Voltage (VCEO) :

150mV

Collector Emitter Breakdown Voltage :

15V

Time@Peak Reflow Temperature-Max (s) :

30

Max Breakdown Voltage :

15V

Current - Collector (Ic) (Max) :

100mA 500mA

Max Output Current :

100mA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3