PBLS2004D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 280mV @ 100mA, 1A

Factory Lead Time :

4 Weeks

Pin Count :

6

Number of Elements :

2

Transistor Application :

SWITCHING

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Base Part Number :

PBLS2004

Voltage - Collector Emitter Breakdown (Max) :

50V 20V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Collector Emitter Voltage (VCEO) :

150mV

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V / 220 @ 500mA 2V

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Max Breakdown Voltage :

20V

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Published :

2005

Collector Emitter Breakdown Voltage :

20V

Radiation Hardening :

No

Number of Pins :

6

Max Operating Temperature :

150°C

Transition Frequency :

185MHz

Min Operating Temperature :

-65°C

Max Collector Current :

1A

Frequency - Transition :

185MHz

Current - Collector (Ic) (Max) :

100mA 1A

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

22k Ω

Max Power Dissipation :

600mW

Current - Collector Cutoff (Max) :

1μA 100nA

Resistor - Base (R1) :

22k Ω

Package / Case :

SC-74, SOT-457