PBLS2004D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2005

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Collector Emitter Breakdown Voltage :

20V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Factory Lead Time :

4 Weeks

Resistor - Base (R1) :

22k Ω

RoHS Status :

ROHS3 Compliant

Transition Frequency :

185MHz

Collector Emitter Voltage (VCEO) :

150mV

Terminal Form :

Gull wing

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

1μA 100nA

Max Operating Temperature :

150°C

Number of Pins :

6

Package / Case :

SC-74, SOT-457

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Max Collector Current :

1A

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V / 220 @ 500mA 2V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 280mV @ 100mA, 1A

Mounting Type :

Surface Mount

Max Power Dissipation :

600mW

Min Operating Temperature :

-65°C

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

20V

ECCN Code :

EAR99

Pin Count :

6

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

100mA 1A

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

PBLS2004

Resistor - Emitter Base (R2) :

22k Ω

Voltage - Collector Emitter Breakdown (Max) :

50V 20V

Frequency - Transition :

185MHz

Lead Free :

Lead Free

Mount :

Surface Mount

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Polarity :

NPN, PNP