PBLS2002S,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Emitter Base (R2) :

4.7k Ω

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Position :

Dual

HTS Code :

8541.21.00.95

Pin Count :

8

Number of Terminations :

8

Polarity/Channel Type :

NPN AND PNP

Mounting Type :

Surface Mount

Transition Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

4.7k Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e4

Power Dissipation-Max (Abs) :

1.5W

Frequency - Transition :

100MHz

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Transistor Application :

SWITCHING

Current - Collector (Ic) (Max) :

100mA 3A

Current - Collector Cutoff (Max) :

1μA 100nA

Turn Off Time-Max (toff) :

205ns

Power - Max :

1.5W

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 5V / 150 @ 2A 2V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Base Part Number :

PBLS2002

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

50V 20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature (Max) :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

JESD-30 Code :

R-PDSO-G8

Turn On Time-Max (ton) :

41ns

Published :

2009

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 355mV @ 300mA, 3A