PBLS2002D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Factory Lead Time :

4 Weeks

Peak Reflow Temperature (Cel) :

260

Resistor - Emitter Base (R2) :

4.7k Ω

Max Breakdown Voltage :

20V

Voltage - Collector Emitter Breakdown (Max) :

50V 20V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

600mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 5V / 220 @ 500mA 2V

Current - Collector (Ic) (Max) :

100mA 1A

Resistor - Base (R1) :

4.7k Ω

Element Configuration :

Dual

Frequency - Transition :

185MHz

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

1μA 100nA

Transition Frequency :

185MHz

Collector Emitter Voltage (VCEO) :

150mV

Published :

2009

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

20V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 280mV @ 100mA, 1A

Base Part Number :

PBLS2002

Package / Case :

SC-74, SOT-457

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

6

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Number of Terminations :

6

Max Operating Temperature :

150°C

Mount :

Surface Mount

JESD-609 Code :

e3

Terminal Form :

Gull wing

Max Collector Current :

1A

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Polarity :

NPN, PNP

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)