NVMFD5C674NLWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2013

FET Type :

2 N-Channel (Dual)

JESD-30 Code :

R-PDSO-F6

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Drain to Source Voltage (Vdss) :

60V

Series :

Automotive, AEC-Q101

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Rds On (Max) @ Id, Vgs :

14.4m Ω @ 10A, 10V

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Terminal Form :

Flat

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 4.5V

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

11A Ta 42A Tc

Avalanche Energy Rating (Eas) :

61 mJ

Power - Max :

3W Ta 37W Tc

Package / Case :

8-PowerTDFN

Factory Lead Time :

48 Weeks

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0204ohm

Pulsed Drain Current-Max (IDM) :

119A

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.2V @ 25μA

Pbfree Code :

yes

FET Feature :

Standard

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant