NVMFD5485NLWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2014

Terminal Finish :

Tin (Sn)

Pin Count :

8

Package / Case :

8-PowerTDFN

Max Power Dissipation :

2.9W

Rds On (Max) @ Id, Vgs :

44m Ω @ 15A, 10V

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

27.8 ns

Element Configuration :

Dual

Fall Time (Typ) :

23.7 ns

Turn On Delay Time :

9.5 ns

Continuous Drain Current (ID) :

5.3A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rise Time :

26.6ns

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Factory Lead Time :

13 Weeks

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Radiation Hardening :

No