NVMFD5C672NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

11A

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

146A

Number of Channels :

2

Turn-Off Delay Time :

22 ns

Number of Elements :

2

Pbfree Code :

yes

Height :

1.1mm

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

66 mJ

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

48 Weeks

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101

Case Connection :

DRAIN

FET Feature :

Standard

Current - Continuous Drain (Id) @ 25°C :

12A Ta 49A Tc

Power Dissipation :

3.1W

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F6

Turn On Delay Time :

11 ns

Reach Compliance Code :

not_compliant

Power - Max :

3.1W Ta 45W Tc

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 10A, 10V

Published :

2013

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0168ohm

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

793pF @ 25V

Vgs(th) (Max) @ Id :

2.2V @ 30μA

Max Junction Temperature (Tj) :

175°C