NVMFD5C478NLT1G
- Mfr.Part #
- NVMFD5C478NLT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- 40V 14.5 MOHM T8 S08FL DU
- Stock
- 24,380
- In Stock :
- 24,380
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Pbfree Code :
- yes
- FET Type :
- 2 N-Channel (Dual)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- 8-PowerTDFN
- Input Capacitance (Ciss) (Max) @ Vds :
- 420pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Ta 29A Tc
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 2.2V @ 20μA
- JESD-609 Code :
- e3
- Factory Lead Time :
- 48 Weeks
- FET Feature :
- Standard
- Drain to Source Voltage (Vdss) :
- 40V
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 14.5m Ω @ 7.5A, 10V
- Power - Max :
- 3.1W Ta 23W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 8.1nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Datasheets
- NVMFD5C478NLT1G

NVMFD5C478NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NVMFD5C478NLT1G Description
Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.
NVMFD5C478NLT1G Features
? Small Footprint (5 x 6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVMFD5C478NLWF ? Wettable Flanks Product
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
NVMFD5C478NLT1G Applications
insulated gate bipolar transistor
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