NVMFD5877NLWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

39m Ω @ 7.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

6A

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerTDFN

Published :

2013

Surface Mount :

yes

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 4 days ago)

Contact Plating :

Tin

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

13 Weeks

Terminal Form :

Flat

Power Dissipation :

3.2W

Drain-source On Resistance-Max :

0.06Ohm

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

74A

Lead Free :

Lead Free

Pin Count :

8

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

3.2W

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

Pbfree Code :

yes

Number of Terminations :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

17A

Reference Standard :

AEC-Q101

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

6A

Halogen Free :

Halogen Free

JESD-30 Code :

R-PDSO-F6

Avalanche Energy Rating (Eas) :

40 mJ

FET Feature :

Logic Level Gate