NTR4502PT1G
- Mfr.Part #
- NTR4502PT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 1.13A SOT23-3
- Stock
- 11,561
- In Stock :
- 11,561
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 2.9mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 15V
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- -30V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -30V
- Fall Time (Typ) :
- 12 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Surface Mount :
- yes
- Nominal Vgs :
- -3 V
- Power Dissipation :
- 1.25W
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Rise Time :
- 12ns
- Pbfree Code :
- yes
- Turn On Delay Time :
- 5.2 ns
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Resistance :
- 155mOhm
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 1.95A, 10V
- FET Type :
- P-Channel
- Factory Lead Time :
- 13 Weeks
- Drain to Source Voltage (Vdss) :
- 30V
- Height :
- 1mm
- Width :
- 1.3mm
- Published :
- 2009
- Turn-Off Delay Time :
- 19 ns
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 400mW Tj
- Threshold Voltage :
- -3V
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -1.95A
- Number of Elements :
- 1
- Packaging :
- Cut Tape (CT)
- Continuous Drain Current (ID) :
- 1.95A
- Current - Continuous Drain (Id) @ 25°C :
- 1.13A Ta
- Datasheets
- NTR4502PT1G

P-Channel Cut Tape (CT) 200m Ω @ 1.95A, 10V ±20V 200pF @ 15V 10nC @ 10V 30V TO-236-3, SC-59, SOT-23-3
NTR4502PT1G Description
NTR4502PT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor based on the leading planar technology for low gate charge and fast switching. It is able to reduce conduction losses based on its low RDS (on). Its SOT-23 package is used to save board space.
NTR4502PT1G Features
-
Low RDS (on)
-
High efficiency
-
Low-voltage gate drive
-
Leading planar technology
-
Available in the SOT-23 package
NTR4502PT1G Applications
-
DC to DC conversion
-
Battery charging circuits
-
Load/Power switch for portables and computing
-
Motherboard, notebooks, camcorders, digital cameras, etc.
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