NTR4171PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

-1.15V

Power Dissipation :

1.25W

Vgs(th) (Max) @ Id :

1.4V @ 250μA

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Pbfree Code :

yes

Element Configuration :

Single

Mounting Type :

Surface Mount

Power Dissipation-Max :

480mW Ta

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Rise Time :

16ns

Turn On Delay Time :

9 ns

Lead Free :

Lead Free

Vgs (Max) :

±12V

Continuous Drain Current (ID) :

-2.2A

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Pin Count :

3

Nominal Vgs :

-1.15 V

Width :

1.4mm

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Length :

3.04mm

Turn-Off Delay Time :

32 ns

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Form :

Gull wing

Height :

1.01mm

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.2A, 10V

Published :

2005

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-30V

Fall Time (Typ) :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

15.6nC @ 10V

FET Type :

P-Channel

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Resistance :

75mOhm

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 15V

Number of Terminations :

3