NTR4101PT1H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

675pF @ 10V

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

3

Element Configuration :

Single

Transistor Element Material :

SILICON

Published :

2013

ECCN Code :

EAR99

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±8V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

420mW Ta

Factory Lead Time :

2 Weeks

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

85m Ω @ 1.6A, 4.5V

Continuous Drain Current (ID) :

1.8A

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

2.4A

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain-source On Resistance-Max :

0.085Ohm

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta