NTR4502PT1
- Mfr.Part #
- NTR4502PT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 1.13A SOT23-3
- Stock
- 29,397
- In Stock :
- 29,397
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Nominal Vgs :
- -3 V
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- -30V
- Rise Time :
- 12ns
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Continuous Drain Current (ID) :
- 1.95A
- Width :
- 1.3mm
- Power Dissipation :
- 1.25W
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 1.95A, 10V
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 155mOhm
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Current Rating :
- -1.95A
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- -3V
- Element Configuration :
- Single
- Turn On Delay Time :
- 5.2 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Cut Tape (CT)
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 13 Weeks
- Fall Time (Typ) :
- 12 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 19 ns
- Height :
- 1mm
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 400mW Tj
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -30V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 1.13A Ta
- Length :
- 2.9mm
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 15V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Datasheets
- NTR4502PT1

P-Channel Cut Tape (CT) 200m Ω @ 1.95A, 10V ±20V 200pF @ 15V 10nC @ 10V 30V TO-236-3, SC-59, SOT-23-3
NTR4502PT1G Description
NTR4502PT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor based on the leading planar technology for low gate charge and fast switching. It is able to reduce conduction losses based on its low RDS (on). Its SOT-23 package is used to save board space.
NTR4502PT1G Features
-
Low RDS (on)
-
High efficiency
-
Low-voltage gate drive
-
Leading planar technology
-
Available in the SOT-23 package
NTR4502PT1G Applications
-
DC to DC conversion
-
Battery charging circuits
-
Load/Power switch for portables and computing
-
Motherboard, notebooks, camcorders, digital cameras, etc.
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