NTR4501NT3
- Mfr.Part #
- NTR4501NT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 3.2A SOT23-3
- Stock
- 18,285
- In Stock :
- 18,285
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 240
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A Ta
- Gate to Source Voltage (Vgs) :
- 12V
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 10V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 12 ns
- Fall Time (Typ) :
- 12 ns
- Pin Count :
- 3
- Vgs (Max) :
- ±12V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 3.6A, 4.5V
- Published :
- 2008
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Voltage - Rated DC :
- 20V
- Power Dissipation-Max :
- 1.25W Tj
- JESD-609 Code :
- e0
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.08Ohm
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Continuous Drain Current (ID) :
- 3.2A
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Element Configuration :
- Single
- Rise Time :
- 12ns
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.25W
- Current Rating :
- 3.2A
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 20V
- Datasheets
- NTR4501NT3

N-Channel Tape & Reel (TR) 80m Ω @ 3.6A, 4.5V ±12V 200pF @ 10V 6nC @ 4.5V TO-236-3, SC-59, SOT-23-3
NTR4501NT3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 200pF @ 10V.This device conducts a continuous drain current (ID) of 3.2A, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 10A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
NTR4501NT3 Features
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 10A.
NTR4501NT3 Applications
There are a lot of ON Semiconductor
NTR4501NT3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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