NTMSD3P303R2

Manufacturer :

onsemi

Product Category :

Unclassified

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

730mW Ta

Voltage - Rated DC :

-30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Turn-Off Delay Time :

45 ns

Transistor Element Material :

SILICON

Rise Time :

16ns

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 24V

Time@Peak Reflow Temperature-Max (s) :

40

Series :

FETKY™

FET Feature :

Schottky Diode (Isolated)

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Published :

2006

FET Type :

P-Channel

Feedback Cap-Max (Crss) :

135 pF

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

2.34A Ta

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

ECCN Code :

EAR99

Fall Time (Typ) :

45 ns

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

2.34A

Drain to Source Breakdown Voltage :

-30V

Current Rating :

-3.05A

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.05A, 10V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Terminations :

8

Terminal Position :

Dual

Power Dissipation :

2W