NTJS4151PT1

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Mfr.Part #
NTJS4151PT1
Manufacturer
onsemi
Package / Case
SOT-363-6
Datasheet
Download
Description
MOSFET P-CH 20V 3.3A SOT-363
Stock
34,066
In Stock :
34,066

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
P-Channel
Drain to Source Resistance :
180mOhm
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature :
150°C
Operating Mode :
ENHANCEMENT MODE
Rds On Max :
60 mΩ
Pin Count :
6
Number of Elements :
1
Lead Free :
Contains Lead
Voltage - Rated DC :
-20V
JESD-609 Code :
e0
Peak Reflow Temperature (Cel) :
240
Package / Case :
SOT-363-6
Turn-Off Delay Time :
2.7 ns
Number of Pins :
6
Reach Compliance Code :
not_compliant
Input Capacitance :
850pF
Packaging :
Cut Tape (CT)
Terminal Position :
Dual
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Form :
Gull wing
Element Configuration :
Single
Max Power Dissipation :
1W
RoHS Status :
Non-RoHS Compliant
Current Rating :
-3.3A
Terminal Finish :
Tin/Lead (Sn/Pb)
Power Dissipation :
1W
Drain to Source Voltage (Vdss) :
20V
Min Operating Temperature :
-55°C
Gate to Source Voltage (Vgs) :
12V
Number of Terminations :
6
Surface Mount :
yes
Drain to Source Breakdown Voltage :
-20V
Continuous Drain Current (ID) :
3.3A
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Application :
SWITCHING
Published :
2006
Datasheets
NTJS4151PT1
Introducing Transistors - FETs, MOSFETs - Single onsemi NTJS4151PT1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-363-6, Number of Pins:6, Number of Terminations:6, NTJS4151PT1 pinout, NTJS4151PT1 datasheet PDF, NTJS4151PT1 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTJS4151PT1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTJS4151PT1


Cut Tape (CT) 20V SOT-363-6

NTJS4151PT1 Overview


This device's continuous drain current (ID) is 3.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 2.7 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 180mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This transistor requires a 20V drain to source voltage (Vdss).

NTJS4151PT1 Features


a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 2.7 ns
single MOSFETs transistor is 180mOhm
a 20V drain to source voltage (Vdss)


NTJS4151PT1 Applications


There are a lot of ON Semiconductor
NTJS4151PT1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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