NTJS4151PT1
- Mfr.Part #
- NTJS4151PT1
- Manufacturer
- onsemi
- Package / Case
- SOT-363-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3.3A SOT-363
- Stock
- 34,066
- In Stock :
- 34,066
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- P-Channel
- Drain to Source Resistance :
- 180mOhm
- Qualification Status :
- Not Qualified
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Operating Temperature :
- 150°C
- Operating Mode :
- ENHANCEMENT MODE
- Rds On Max :
- 60 mΩ
- Pin Count :
- 6
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Voltage - Rated DC :
- -20V
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- 240
- Package / Case :
- SOT-363-6
- Turn-Off Delay Time :
- 2.7 ns
- Number of Pins :
- 6
- Reach Compliance Code :
- not_compliant
- Input Capacitance :
- 850pF
- Packaging :
- Cut Tape (CT)
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Max Power Dissipation :
- 1W
- RoHS Status :
- Non-RoHS Compliant
- Current Rating :
- -3.3A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation :
- 1W
- Drain to Source Voltage (Vdss) :
- 20V
- Min Operating Temperature :
- -55°C
- Gate to Source Voltage (Vgs) :
- 12V
- Number of Terminations :
- 6
- Surface Mount :
- yes
- Drain to Source Breakdown Voltage :
- -20V
- Continuous Drain Current (ID) :
- 3.3A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Datasheets
- NTJS4151PT1

Cut Tape (CT) 20V SOT-363-6
NTJS4151PT1 Overview
This device's continuous drain current (ID) is 3.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 2.7 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 180mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This transistor requires a 20V drain to source voltage (Vdss).
NTJS4151PT1 Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 2.7 ns
single MOSFETs transistor is 180mOhm
a 20V drain to source voltage (Vdss)
NTJS4151PT1 Applications
There are a lot of ON Semiconductor
NTJS4151PT1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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