NTJS3151PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-12V

Resistance :

45mOhm

Turn On Delay Time :

860 ps

Vgs (Max) :

±12V

Terminal Position :

Dual

Fall Time (Typ) :

1.5 ns

Current Rating :

-3.3A

Published :

2006

Height :

1mm

Rise Time :

1.5ns

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.3A, 4.5V

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 4.5V

Lead Free :

Lead Free

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Width :

1.35mm

JESD-609 Code :

e3

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Terminations :

6

Voltage - Rated DC :

-12V

Vgs(th) (Max) @ Id :

1.2V @ 100μA

Number of Pins :

6

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate to Source Voltage (Vgs) :

12V

Length :

2.2mm

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Factory Lead Time :

19 Weeks

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

2.7A

Continuous Drain Current (ID) :

3.3A

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pin Count :

6

Power Dissipation-Max :

625mW Ta

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 12V

Pbfree Code :

yes

Surface Mount :

yes

Turn-Off Delay Time :

3.5 ns

FET Type :

P-Channel

Element Configuration :

Single

Power Dissipation :

625mW

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta