NTJS3157NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 10V

Drain to Source Breakdown Voltage :

20V

Rise Time :

12ns

JESD-609 Code :

e3

Height :

1mm

Voltage - Rated DC :

20V

Continuous Drain Current (ID) :

4mA

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Resistance :

45mOhm

Surface Mount :

yes

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Width :

1.35mm

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Mounting Type :

Surface Mount

Fall Time (Typ) :

11 ns

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Power Dissipation :

1W

Rds On (Max) @ Id, Vgs :

60m Ω @ 4A, 4.5V

Nominal Vgs :

400 mV

Turn-Off Delay Time :

21 ns

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Turn On Delay Time :

6 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Pin Count :

6

Published :

2006

Terminal Position :

Dual

Length :

2.2mm

FET Type :

N-Channel

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Power Dissipation-Max :

1W Ta

Transistor Application :

SWITCHING

Number of Pins :

6

ECCN Code :

EAR99

Number of Terminations :

6

Vgs (Max) :

±8V

Current Rating :

3.2A

Number of Elements :

1