NTJS3157NT2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

3.2A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 10V

Rds On (Max) @ Id, Vgs :

60m Ω @ 4A, 4.5V

Voltage - Rated DC :

20V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

1W Ta

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Terminal Form :

Gull wing

Power Dissipation :

1W

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Elements :

1

Qualification Status :

Not Qualified

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

21 ns

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Vgs (Max) :

±8V

FET Type :

N-Channel

Element Configuration :

Single

Number of Terminations :

6

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Mounting Type :

Surface Mount

Current Rating :

3.2A

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual