NTJS3157NT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Number of Terminations :

6

Power Dissipation-Max :

1W Ta

JESD-30 Code :

R-PDSO-G6

Vgs (Max) :

±8V

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.06Ohm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

not_compliant

Power Dissipation :

1W

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Terminal Position :

Dual

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

400mV @ 250μA

FET Type :

N-Channel

Package / Case :

6-TSSOP, SC-88, SOT-363

Peak Reflow Temperature (Cel) :

240

Voltage - Rated DC :

20V

Continuous Drain Current (ID) :

3.2A

Pin Count :

6

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 10V

Turn-Off Delay Time :

21 ns

Current Rating :

3.2A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

60m Ω @ 4A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V