NTHC5513T1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Form :

C BEND

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

FET Feature :

Logic Level Gate

Turn On Delay Time :

7 ns

ECCN Code :

EAR99

Radiation Hardening :

No

Factory Lead Time :

2 Weeks

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

JESD-609 Code :

e3

Number of Pins :

8

Length :

3.1mm

Height :

1.1mm

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SMD, Flat Lead

Continuous Drain Current (ID) :

3.9A

Rise Time :

13ns

Published :

2005

Surface Mount :

yes

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

600mV

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

20V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Max Power Dissipation :

1.1W

Turn-Off Delay Time :

33 ns

Width :

1.7mm

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

2.9A 2.2A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

-20V

Number of Terminations :

8

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Power Dissipation :

1.1W

FET Type :

N and P-Channel

Peak Reflow Temperature (Cel) :

260

Base Part Number :

NTHC5513

Weight :

4.535924g

Current Rating :

3.1A

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

10A

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Gate to Source Voltage (Vgs) :

12V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.9A, 4.5V

Nominal Vgs :

600 mV