NTHC5513T1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.1W

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.9A, 4.5V

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Current Rating :

3.1A

Nominal Vgs :

600 mV

Threshold Voltage :

600mV

Mounting Type :

Surface Mount

Surface Mount :

yes

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

NTHC5513

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

8

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Terminal Finish :

Tin (Sn)

Terminal Form :

C BEND

Power Dissipation :

1.1W

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

2.9A 2.2A

Number of Terminations :

8

Rise Time :

13ns

FET Type :

N and P-Channel

Radiation Hardening :

No

Number of Elements :

2

Lead Free :

Lead Free

Width :

1.7mm

Continuous Drain Current (ID) :

3.9A

ECCN Code :

EAR99

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Turn On Delay Time :

7 ns

Package / Case :

8-SMD, Flat Lead

Published :

2005

Gate to Source Voltage (Vgs) :

12V

Height :

1.1mm

Drain to Source Breakdown Voltage :

-20V

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

10A

Factory Lead Time :

2 Weeks

Turn-Off Delay Time :

33 ns

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

20V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Length :

3.1mm