NTF3055L175T3LF
- Mfr.Part #
- NTF3055L175T3LF
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 2A SOT223
- Stock
- 36,574
- In Stock :
- 36,574
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Voltage - Rated DC :
- 60V
- Power Dissipation-Max :
- 1.3W Ta
- Package / Case :
- TO-261-4, TO-261AA
- Pulsed Drain Current-Max (IDM) :
- 6A
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PDSO-G4
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Rise Time :
- 21ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Lead Free :
- Contains Lead
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 1A, 5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Continuous Drain Current (ID) :
- 2A
- Vgs (Max) :
- ±15V
- Published :
- 2004
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Drain Current-Max (Abs) (ID) :
- 2A
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 5V
- Drain-source On Resistance-Max :
- 0.175Ohm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Current Rating :
- 2A
- Pin Count :
- 4
- Datasheets
- NTF3055L175T3LF

N-Channel Tape & Reel (TR) 175m Ω @ 1A, 5V ±15V 270pF @ 25V 10nC @ 5V TO-261-4, TO-261AA
NTF3055L175T3LF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 65 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [2A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 2A.A maximum pulsed drain current of 6A is the maximum peak drain current rated for this device.Its overall power consumption can be reduced by using drive voltage (5V).
NTF3055L175T3LF Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 2A
based on its rated peak drain current 6A.
NTF3055L175T3LF Applications
There are a lot of ON Semiconductor
NTF3055L175T3LF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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