NTF3055-100T1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

60V

Continuous Drain Current (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

3V

Peak Reflow Temperature (Cel) :

260

Height :

1.65mm

Pbfree Code :

yes

Resistance :

110mOhm

Factory Lead Time :

8 Weeks

Number of Pins :

4

Voltage - Rated DC :

60V

Number of Elements :

1

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

9.4 ns

Turn-Off Delay Time :

21 ns

FET Type :

N-Channel

JESD-609 Code :

e3

Pin Count :

4

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

110m Ω @ 1.5A, 10V

Case Connection :

DRAIN

Power Dissipation-Max :

1.3W Ta

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

3A

Published :

2006

Number of Terminations :

4

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

9A

Surface Mount :

yes

Nominal Vgs :

3 V

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Width :

3.7mm

Termination :

SMD/SMT

Vgs (Max) :

±20V

Package / Case :

TO-261-4, TO-261AA

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Transistor Application :

SWITCHING

Fall Time (Typ) :

13 ns

Rise Time :

14ns

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 25V

Current Rating :

3A

Length :

6.7mm

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.1W

REACH SVHC :

No SVHC

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)