NTF3055L175T3
- Mfr.Part #
- NTF3055L175T3
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 2A SOT223
- Stock
- 37,294
- In Stock :
- 37,294
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-261-4, TO-261AA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 6A
- Power Dissipation-Max :
- 1.3W Ta
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Current Rating :
- 2A
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Published :
- 2004
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 5V
- Pin Count :
- 4
- JESD-609 Code :
- e0
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±15V
- Drain-source On Resistance-Max :
- 0.175Ohm
- Continuous Drain Current (ID) :
- 2A
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Qualification Status :
- Not Qualified
- Drain Current-Max (Abs) (ID) :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Rise Time :
- 21ns
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 4
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 1A, 5V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- JESD-30 Code :
- R-PDSO-G4
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NTF3055L175T3

N-Channel Tape & Reel (TR) 175m Ω @ 1A, 5V ±15V 270pF @ 25V 10nC @ 5V TO-261-4, TO-261AA
NTF3055L175T3LF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 65 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [2A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 2A.A maximum pulsed drain current of 6A is the maximum peak drain current rated for this device.Its overall power consumption can be reduced by using drive voltage (5V).
NTF3055L175T3LF Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 2A
based on its rated peak drain current 6A.
NTF3055L175T3LF Applications
There are a lot of ON Semiconductor
NTF3055L175T3LF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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