NTF3055L108T3LFG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

4

Fall Time (Typ) :

27 ns

Pulsed Drain Current-Max (IDM) :

9A

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Case Connection :

DRAIN

Voltage - Rated DC :

60V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

15V

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.12Ohm

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

5V

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

120m Ω @ 1.5A, 5V

ECCN Code :

EAR99

Vgs (Max) :

±15V

Rise Time :

35ns

Drain Current-Max (Abs) (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Terminal Position :

Dual

Pin Count :

4

Mounting Type :

Surface Mount

Current Rating :

3A

Power Dissipation-Max :

1.3W Ta

Number of Terminations :

4

Package / Case :

TO-261-4, TO-261AA

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 5V

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

22 ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

3A

Power Dissipation :

2.1W