NTF3055L175T1
- Mfr.Part #
- NTF3055L175T1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 2A SOT223
- Stock
- 17,419
- In Stock :
- 17,419
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 60V
- Turn-Off Delay Time :
- 14.3 ns
- Lead Free :
- Contains Lead
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PDSO-G4
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 6A
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±15V
- Current Rating :
- 2A
- JESD-609 Code :
- e0
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Fall Time (Typ) :
- 15.3 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Gate to Source Voltage (Vgs) :
- 15V
- Published :
- 2006
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Power Dissipation :
- 2.1W
- Transistor Element Material :
- SILICON
- Rise Time :
- 21ns
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max :
- 1.3W Ta
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Drain-source On Resistance-Max :
- 0.175Ohm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 5V
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 2A
- Package / Case :
- TO-261-4, TO-261AA
- Peak Reflow Temperature (Cel) :
- 240
- RoHS Status :
- Non-RoHS Compliant
- Continuous Drain Current (ID) :
- 2A
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 1A, 5V
- Pin Count :
- 4
- Drain to Source Breakdown Voltage :
- 60V
- Datasheets
- NTF3055L175T1

N-Channel Tape & Reel (TR) 175m Ω @ 1A, 5V ±15V 270pF @ 25V 10nC @ 5V TO-261-4, TO-261AA
NTF3055L175T1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 65 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 270pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 14.3 ns.Peak drain current is 6A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 15V to 1.Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
NTF3055L175T1 Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 14.3 ns
based on its rated peak drain current 6A.
NTF3055L175T1 Applications
There are a lot of ON Semiconductor
NTF3055L175T1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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