NTE290

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

0.6(W)

Transistor Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 50mA, 5V

Supplier Device Package :

TO-92

Frequency - Transition :

120MHz

Terminal Position :

BOTTOM

Product Status :

Active

Series :

-

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Frequency :

120(MHz)

Category :

Bipolar Small Signal

Voltage - Collector Emitter Breakdown (Max) :

80 V

Power - Max :

600 mW

Manufacturer :

NTE Electronics

Number of Elements :

1

Transistor Element Material :

SILICON

Surface Mount :

No

Transistor Polarity :

PNP

Package :

Bag

Emitter-Base Voltage :

5(V)

Subcategory :

Other Transistors

HTS Code :

8541.21.00.75

Collector Current-Max (IC) :

0.5 A

Reach Compliance Code :

Unknown

JEDEC-95 Code :

TO-92

Collector-Emitter Voltage-Max :

80 V

Polarity/Channel Type :

PNP

Number of Terminals :

3

Collector-Base Voltage :

100(V)

Current - Collector (Ic) (Max) :

500 mA

DC Current Gain-Min (hFE) :

100

Operating Temp Range :

-55C to 150C

Pin Count :

3

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Power Dissipation-Max (Abs) :

0.5 W

JESD-30 Code :

O-PBCY-W3

Terminal Form :

Wire

ECCN Code :

EAR99

Mounting :

Through Hole

Current - Collector Cutoff (Max) :

1µA (ICBO)

Package Shape :

Round

Rad Hardened :

No

Configuration :

Single

Collector Current (DC) :

0.5(A)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 40mA, 400mA

Operating Temperature :

150°C (TJ)

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature Classification :

Military

Output Power :

Not Required(W)