NTE281
- Mfr.Part #
- NTE281
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 12A TO3
- Stock
- 77
- In Stock :
- 77
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector-Emitter Voltage-Max :
- 150 V
- Qualification Status :
- Not Qualified
- Emitter-Base Voltage :
- 5(V)
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2A, 5V
- DC Current Gain :
- 40
- Reach Compliance Code :
- Unknown
- Case Connection :
- COLLECTOR
- Operating Temp Range :
- -65C to 150C
- Configuration :
- Single
- Package Shape :
- Round
- Collector Current-Max (IC) :
- 12 A
- Power Dissipation :
- 100(W)
- DC Current Gain-Min (hFE) :
- 70
- Number of Terminals :
- 2
- JEDEC-95 Code :
- TO-3
- Package / Case :
- TO-204AA, TO-3
- Additional Feature :
- MATCHED COMPLIMENTARY PAIR CONTAINS NTE280 AND NTE281
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 700mA, 7A
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 140 V
- Operating Temperature Classification :
- Military
- Terminal Form :
- PIN/PEG
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Package :
- Bag
- Operating Temperature :
- 150°C (TJ)
- Mounting :
- Through Hole
- Collector Current (DC) :
- 12(A)
- Mounting Type :
- Through Hole
- Output Power :
- Not Required(W)
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- JESD-30 Code :
- O-MBFM-P2
- Manufacturer :
- NTE Electronics
- Power - Max :
- 100 W
- Number of Elements :
- 1
- Rad Hardened :
- No
- Transistor Application :
- AMPLIFIER
- Frequency :
- 5(MHz)
- Supplier Device Package :
- TO-3
- ECCN Code :
- EAR99
- Power Dissipation Ambient-Max :
- 100 W
- Current - Collector (Ic) (Max) :
- 12 A
- Frequency - Transition :
- 5MHz
- Pin Count :
- 2 +Tab
- Collector-Base Voltage :
- 140(V)
- Series :
- -
- Category :
- Bipolar Power
- Package Type :
- TO-3
- Transistor Polarity :
- PNP
- Surface Mount :
- No
- Polarity/Channel Type :
- NPN AND PNP
- Subcategory :
- BIP General Purpose Small Signal
- Datasheets
- NTE281

PNP 150°C (TJ) 100μA (ICBO) 1 Elements SILICON NPN AND PNP TO-204AA, TO-3 Through Hole
NTE281MCP Overview
In this device, the DC current gain is 40 @ 2A, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 700mA, 7A.Supplier device package TO-3 comes with the product.Voltage of maximal collector-emitter is set to 150 V.The device exhibits a collector-emitter breakdown at 140 V.
NTE281MCP Features
the DC current gain for this device is 40 @ 2A, 5V
the vce saturation(Max) is 3V @ 700mA, 7A
the supplier device package of TO-3
NTE281MCP Applications
There are a lot of NTE Electronics, Inc
NTE281MCP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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