NTE274

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Mfr.Part #
NTE274
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-213AA, TO-66-2
Datasheet
Download
Description
TRANS NPN DARL 80V 4A TO66
Stock
120
In Stock :
120

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation Ambient-Max :
50 W
Power Dissipation-Max (Abs) :
50 W
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
Frequency - Transition :
-
Case Connection :
COLLECTOR
Surface Mount :
No
Supplier Device Package :
TO-66
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A, 3V
DC Current Gain-Min (hFE) :
100
Number of Terminals :
2
Configuration :
Single
Polarity/Channel Type :
NPN
Subcategory :
Other Transistors
Operating Temperature :
-65°C ~ 200°C (TJ)
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Terminal Form :
PIN/PEG
Current - Collector (Ic) (Max) :
4 A
Current - Collector Cutoff (Max) :
500μA
Package / Case :
TO-213AA, TO-66-2
Package :
Bag
Reach Compliance Code :
Unknown
Manufacturer :
NTE Electronics
ECCN Code :
EAR99
Voltage - Collector Emitter Breakdown (Max) :
80 V
Transistor Application :
SWITCHING
Terminal Position :
BOTTOM
Product Status :
Active
Collector-Emitter Voltage-Max :
80 V
Power - Max :
50 W
JESD-30 Code :
O-MBFM-P2
JEDEC-95 Code :
TO-66
Transistor Type :
NPN - Darlington
Mounting Type :
Through Hole
Package Shape :
Round
Series :
-
Collector Current-Max (IC) :
4 A
Number of Elements :
1
Datasheets
NTE274
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE274 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-213AA, TO-66-2, Mounting Type:Through Hole, NTE274 pinout, NTE274 datasheet PDF, NTE274 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE274 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE274


NPN - Darlington -65°C ~ 200°C (TJ) 500μA 1 Elements SILICON NPN TO-213AA, TO-66-2 Through Hole

NTE274 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 2A, 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 40mA, 4A.The product comes in the supplier device package of TO-66.There is a setting of 80 V for maximal collector-Emitter voltage.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.

NTE274 Features


the DC current gain for this device is 750 @ 2A, 3V
the vce saturation(Max) is 3V @ 40mA, 4A
the supplier device package of TO-66


NTE274 Applications


There are a lot of NTE Electronics, Inc
NTE274 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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