NTD4979N-35G

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Mfr.Part #
NTD4979N-35G
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 30V 9.4A/41A IPAK
Stock
4,435
In Stock :
4,435

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Turn-Off Delay Time :
13.3 ns
Input Capacitance (Ciss) (Max) @ Vds :
837pF @ 15V
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
9.4A Ta 41A Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
16.5nC @ 10V
Reach Compliance Code :
not_compliant
Number of Pins :
3
FET Type :
N-Channel
Turn On Delay Time :
10 ns
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
2 Weeks
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
6.4 ns
Power Dissipation-Max :
1.38W Ta 26.3W Tc
Vgs (Max) :
±20V
Mount :
Through Hole
Power Dissipation :
2.56W
Rise Time :
27ns
Drain to Source Breakdown Voltage :
30V
Continuous Drain Current (ID) :
41A
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
9m Ω @ 30A, 10V
Packaging :
Tube
Lead Free :
Lead Free
Published :
2012
Datasheets
NTD4979N-35G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTD4979N-35G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, NTD4979N-35G pinout, NTD4979N-35G datasheet PDF, NTD4979N-35G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTD4979N-35G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTD4979N-35G


N-Channel Tube 9m Ω @ 30A, 10V ±20V 837pF @ 15V 16.5nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

NTD4979N-35G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 837pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 41A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 13.3 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

NTD4979N-35G Features


a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 13.3 ns


NTD4979N-35G Applications


There are a lot of ON Semiconductor
NTD4979N-35G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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