NTD4979N-35G
- Mfr.Part #
- NTD4979N-35G
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9.4A/41A IPAK
- Stock
- 4,435
- In Stock :
- 4,435
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Turn-Off Delay Time :
- 13.3 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 837pF @ 15V
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 9.4A Ta 41A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 16.5nC @ 10V
- Reach Compliance Code :
- not_compliant
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Turn On Delay Time :
- 10 ns
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 2 Weeks
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 6.4 ns
- Power Dissipation-Max :
- 1.38W Ta 26.3W Tc
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Power Dissipation :
- 2.56W
- Rise Time :
- 27ns
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 41A
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 30A, 10V
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Published :
- 2012
- Datasheets
- NTD4979N-35G

N-Channel Tube 9m Ω @ 30A, 10V ±20V 837pF @ 15V 16.5nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
NTD4979N-35G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 837pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 41A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 13.3 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTD4979N-35G Features
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 13.3 ns
NTD4979N-35G Applications
There are a lot of ON Semiconductor
NTD4979N-35G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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