NTD40N03R-001
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- Mfr.Part #
- NTD40N03R-001
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 7.8A/32A IPAK
- Stock
- 8,254
- In Stock ：
- 8,254
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 32A
- Current Rating :
- 40A
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 25V
- Rds On (Max) @ Id, Vgs :
- 16.5m Ω @ 10A, 10V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 1.5W Ta 50W Tc
- FET Type :
- N-Channel
- Power Dissipation :
- 2.1W
- Mounting Type :
- Through Hole
- Rise Time :
- 19.5ns
- Turn-Off Delay Time :
- 16.7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 5.78nC @ 4.5V
- Voltage - Rated DC :
- 25V
- Fall Time (Typ) :
- 3.5 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2005
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Continuous Drain (Id) @ 25°C :
- 7.8A Ta 32A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 584pF @ 20V
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- NTD40N03R-001
N-Channel Tube 16.5m Ω @ 10A, 10V ±20V 584pF @ 20V 5.78nC @ 4.5V TO-251-3 Short Leads, IPak, TO-251AA
NTD40N03R-001 Overview
A device's maximum input capacitance is 584pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 32A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=25V, and this device has a drain-to-source breakdown voltage of 25V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTD40N03R-001 Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 16.7 ns
NTD40N03R-001 Applications
There are a lot of ON Semiconductor
NTD40N03R-001 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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