NTD4302T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

18.5A

Turn-Off Delay Time :

40 ns

Voltage - Rated DC :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

722 mJ

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

4

JESD-609 Code :

e3

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

10m Ω @ 20A, 10V

Power Dissipation :

75W

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

28A

Packaging :

Tape and Reel (TR)

Current Rating :

68A

Number of Elements :

1

Number of Terminations :

2

Power Dissipation-Max :

1.04W Ta 75W Tc

Threshold Voltage :

1.9V

Factory Lead Time :

2 Weeks

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Vgs (Max) :

±20V

Nominal Vgs :

1.9 V

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Mounting Type :

Surface Mount

Radiation Hardening :

No

FET Type :

N-Channel

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 24V

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Published :

2005

Surface Mount :

yes

Transistor Application :

SWITCHING

Resistance :

7.8mOhm

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

8.4A Ta 68A Tc