NTD4302-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2.4pF @ 24V

Vgs(th) (Max) @ Id :

3V @ 250µA

Surface Mount :

No

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Through Hole

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

8.4A Ta 68A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Packaging :

Tube

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

28A

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

FET Type :

N-Channel

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.01Ohm

Qualification Status :

COMMERCIAL

Power Dissipation-Max :

1.04W Ta 75W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

722 mJ

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

10m Ω @ 20A, 10V

Pin Count :

3

Terminal Position :

Single

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

8.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)