NTD40N03RT4
- Mfr.Part #
- NTD40N03RT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 7.8A/32A DPAK
- Stock
- 5,838
- In Stock :
- 5,838
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- Drain Current-Max (Abs) (ID) :
- 32A
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 16.5m Ω @ 10A, 10V
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- TIN LEAD
- Pulsed Drain Current-Max (IDM) :
- 100A
- Surface Mount :
- yes
- Qualification Status :
- COMMERCIAL
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 7.8A Ta 32A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 5.78nC @ 4.5V
- Case Connection :
- DRAIN
- Pin Count :
- 3
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.023Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 584pF @ 20V
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 25V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 1.5W Ta 50W Tc
- DS Breakdown Voltage-Min :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Datasheets
- NTD40N03RT4
NTD40N03RT4 Documents

N-Channel Tape & Reel (TR) 16.5m Ω @ 10A, 10V ±20V 584pF @ 20V 5.78nC @ 4.5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD40N03RT4 Overview
A device's maximal input capacitance is 584pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 32A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTD40N03RT4 Features
based on its rated peak drain current 100A.
a 25V drain to source voltage (Vdss)
NTD40N03RT4 Applications
There are a lot of Rochester Electronics, LLC
NTD40N03RT4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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