NTD4970N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

774pF @ 15V

Power Dissipation :

2.55W

Drain Current-Max (Abs) (ID) :

8.5A

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

JESD-609 Code :

e3

Pbfree Code :

yes

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

11.6A

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Published :

2012

Rise Time :

27.6ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Fall Time (Typ) :

5.7 ns

Element Configuration :

Single

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

3

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

11m Ω @ 30A, 10V

Power Dissipation-Max :

1.38W Ta 24.6W Tc

Number of Terminations :

3

Transistor Application :

SWITCHING

Radiation Hardening :

No

FET Type :

N-Channel

Factory Lead Time :

2 Weeks

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta 36A Tc

Package / Case :

TO-251-3 Stub Leads, IPak

RoHS Status :

ROHS3 Compliant