NTD4970N-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

I-PAK

Base Product Number :

NTD49

Rds On Max :

11 mΩ

Manufacturer Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Drain to Source Resistance :

21 mΩ

Max Operating Temperature :

175 °C

RoHS :

Compliant

Element Configuration :

Single

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

11mOhm @ 30A, 10V

Gate to Source Voltage (Vgs) :

20 V

Input Capacitance :

774 pF

Gate Charge (Qg) (Max) @ Vgs :

8.2 nC @ 4.5 V

Drain to Source Voltage (Vdss) :

30 V

Mounting Type :

Through Hole

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Continuous Drain Current (ID) :

11.6 A

Max Power Dissipation :

1.38 W

Package :

Tube

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rise Time :

27.6 ns

Number of Pins :

4

FET Feature :

-

Technology :

MOSFET (Metal Oxide)

Lead Free :

Lead Free

Power Dissipation :

2.55 W

Number of Elements :

1

Min Operating Temperature :

-55 °C

Current - Continuous Drain (Id) @ 25°C :

8.5A (Ta), 36A (Tc)

Drain to Source Breakdown Voltage :

30 V

FET Type :

N-Channel

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

774 pF @ 15 V