NTD4969NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

837pF @ 15V

Published :

2011

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

4

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

12.7A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10 ns

Rise Time :

27ns

Case Connection :

DRAIN

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Fall Time (Typ) :

6.4 ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Surface Mount :

yes

Turn-Off Delay Time :

13.3 ns

Radiation Hardening :

No

Power Dissipation-Max :

1.38W Ta 26.3W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta 41A Tc

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Pbfree Code :

yes

Power Dissipation :

26.3W

Element Configuration :

Single