NTD4965NT4G
- Mfr.Part #
- NTD4965NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13A/68A DPAK-3
- Stock
- 4,844
- In Stock :
- 4,844
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 17.2nC @ 4.5V
- Surface Mount :
- yes
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 17.8A
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 18.9 ns
- Turn On Delay Time :
- 12.1 ns
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 14.2 ns
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta 68A Tc
- Drain Current-Max (Abs) (ID) :
- 68A
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 38.5W
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1710pF @ 15V
- Avalanche Energy Rating (Eas) :
- 60 mJ
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Rise Time :
- 34.2ns
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Pin Count :
- 4
- Factory Lead Time :
- 5 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 1.39W Ta
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 30A, 10V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Drain to Source Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Datasheets
- NTD4965NT4G

N-Channel Tape & Reel (TR) 4.7m Ω @ 30A, 10V ±20V 1710pF @ 15V 17.2nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4965NT4G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1710pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 17.8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 68A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18.9 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTD4965NT4G Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 17.8A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18.9 ns
NTD4965NT4G Applications
There are a lot of ON Semiconductor
NTD4965NT4G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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