NTD4960NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

8.9A Ta 55A Tc

ECCN Code :

EAR99

Continuous Drain Current (ID) :

11.1A

REACH SVHC :

No SVHC

Power Dissipation-Max :

1.07W Ta 35.71W Tc

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Height :

2.38mm

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

8.9A

Number of Terminations :

2

Power Dissipation :

1.68W

Transistor Element Material :

SILICON

Width :

6.22mm

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

15 ns

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

4 ns

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Number of Pins :

4

Published :

2010

Terminal Form :

Gull wing

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

Length :

6.73mm

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Radiation Hardening :

No

Resistance :

8mOhm

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

20ns

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pbfree Code :

yes