NTD4960N-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

15 ns

Packaging :

Tube

Transistor Element Material :

SILICON

Width :

2.38mm

Rds On (Max) @ Id, Vgs :

8m Ω @ 30A, 10V

Power Dissipation-Max :

1.07W Ta 35.71W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

4

Height :

7.49mm

Fall Time (Typ) :

4 ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

8.9A Ta 55A Tc

Pbfree Code :

yes

Turn On Delay Time :

12 ns

Rise Time :

20ns

Length :

6.73mm

Drain Current-Max (Abs) (ID) :

8.9A

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

FET Type :

N-Channel

Pin Count :

4

ECCN Code :

EAR99

Resistance :

8mOhm

JESD-30 Code :

R-PSIP-T3

Mount :

Through Hole

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation :

1.68W

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

11.1A

Published :

2010

Qualification Status :

Not Qualified

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V